item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1400 2100 - 1300 - -0.5 -1.5 -3.0 -5.0 - - 5.0 5.5 - -25- 34.0 35.0 - v ds = 5v, i ds = 70ma v ds = 5v, i ds = 900ma v ds = 5v, v gs = 0v i gs = -70 a v ds =10v, i ds = 0.6 i dss (typ.), f = 13.75 ~ 14.5 ghz, z s =z l = 50 ohm f = 14.5ghz, ? f = 10 mhz 2-tone test p out = 24.0dbm s.c.l. ma ms v db % -42 -45 - dbc dbm v g m v p v gso p 1db g 1db drain current - 900 1100 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 5.0 6.0 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ia 10v x i dsr x r th channel temperature rise - - 66 c ? t ch item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25.0 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 13.0 and -1.4 ma respectively with gate resistance of 100 ? . 1 edition 1.3 december 2003 FLM1314-3F x, ku-band internally matched fet description the FLM1314-3F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 35.0dbm (typ.) ?high gain: g 1db = 5.5db (typ.) ?high pae: add = 25% (typ.) ?low im 3 = -45dbc@po = 24.0dbm ?broad band: 13.75 ~ 14.5ghz ?impedance matched zin/zout = 50 ?
2 FLM1314-3F x, ku-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( c) 24 30 18 12 6 total power dissipation (w) output power & im 3 vs. input power v ds =10v f1 = 14.5 ghz f2 = 14.51 ghz 2-tone test 15 19 17 23 21 input power (s.c.l.) (dbm) s.c.l.: single carrier level output power (s.c.l.) (dbc) -25 -15 -35 -45 -55 24 22 20 26 28 30 18 im 3 (dbc) im 3 p out 13.9 13.7 14.1 14.3 14.5 32 31 33 34 35 36 frequency (ghz) output power (dbm) output power vs. frequency v ds = 10v p 1db pin = 31dbm 29dbm 27dbm 25dbm 20 18 22 24 26 28 30 32 28 24 26 30 32 34 36 30 10 20 input power (dbm) output power (dbm) add (%) add pout output power vs. input power v ds = 10v f = 14.25 ghz
3 FLM1314-3F x, ku-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.1 0.2 10 25 50 ? 2 3 4 13.7 13.7 13.9 13.9 14.1 14.1 14.3 14.3 14.5 14.5 14.7 14.7 13.55 ghz 13.55 ghz 13.7 13.7 13.9 13.9 14.1 14.1 14.3 14.3 14.5 14.5 14.7 14.7 13.55 ghz 13.55 ghz 1 s-parameters v ds = 10v, i ds = 900ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 1355 .522 60.0 1.928 -160.3 .071 -179.5 .527 89.5 1360 .503 54.7 1.973 -165.0 .079 176.8 .511 84.8 1365 .485 49.3 2.012 -169.9 .083 171.6 .496 79.6 1370 .461 43.5 2.044 -175.0 .087 165.4 .475 74.6 1375 .440 37.4 2.080 179.9 .090 161.9 .458 69.3 1380 .418 31.2 2.114 174.5 .096 156.3 .438 63.7 1385 .394 24.4 2.145 169.3 .102 150.8 .419 57.5 1390 .370 17.6 2.160 163.8 .105 146.9 .398 50.7 1395 .344 10.0 2.181 158.3 .109 139.7 .376 44.2 1400 .322 2.1 2.187 153.1 .115 136.8 .355 36.7 1405 .299 -6.0 2.197 147.5 .120 130.8 .333 29.1 1410 .275 -15.0 2.196 142.0 .123 127.0 .318 21.3 1415 .255 -24.8 2.193 136.5 .126 121.4 .297 12.3 1420 .235 -35.9 2.186 130.8 .128 115.3 .278 3.8 1425 .220 -46.3 2.174 125.4 .132 110.1 .263 -5.8 1430 .205 -58.6 2.152 119.9 .133 104.5 .245 -16.4 1435 .195 -71.6 2.133 114.5 .137 100.3 .232 -27.5 1440 .190 -85.3 2.107 109.0 .138 94.1 .219 -37.7 1445 .190 -98.6 2.081 103.7 .139 89.4 .209 -49.3 1450 .193 -111.2 2.042 98.7 .139 84.0 .205 -60.7 1455 .199 -123.6 2.021 93.4 .140 79.5 .204 -71.8 1460 .212 -135.6 1.984 88.3 .141 74.9 .206 -83.4 1465 .223 -146.3 1.944 83.4 .139 69.1 .205 -93.7 1470 .245 -155.5 1.909 78.2 .138 65.4 .211 -104.6
for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics europe, gmbh quantum devices division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1999 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0499m200 4 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLM1314-3F x, ku-band internally matched fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4
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